Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
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概要
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ZnSnAs2 thin films were prepared by molecular beam epitaxy (MBE) on semi-insulating (001) InP substrates using the same growth conditions as previously reported. High-resolution X-ray diffractometry (HRXRD) and Raman spectroscopy studies suggest the presence of both the chalcopyrite and sphalerite phases. The transport properties were measured from 5 K up to room temperature. We observed a pronounced peak in the Hall coefficient temperature dependence curve at ${\sim}130$ K, similar to those observed only from chalcopyrite-phase bulk ZnSnAs2 in earlier studies. A hole concentration of $ p = 5.98 \times 10^{18}$ cm-3, hole mobility of $\mu = 23.61$ cm2/(V$\cdot$s) and resistivity of $\rho = 4.43 \times 10^{-2}$ $\Omega$$\cdot$cm were obtained at room temperature.
- 2008-01-25
著者
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KATO Ariyuki
Department of Chemistry, Nagaoka University of Technology
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Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
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Jinbo Yoshio
Department Of Electrical Engineering Nagaoka University Of Technology
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Asubar Joel
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata 940-2188, Japan
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Asubar Joel
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Uchitomi Naotaka
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata 940-2188, Japan
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Kato Ariyuki
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata 940-2188, Japan
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