Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-Based Spintronic Devices
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概要
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We investigated the growth and magnetic properties of ternary ZnSnAs2 thin films doped with a various degrees of Mn content. It was confirmed that Mn-doped ZnSnAs2 thin films are pseudomorphically grown on nearly lattice-matched InP(001) substrates. Magnetization measurements on Mn-doped ZnSnAs2 thin films revealed a ferromagnetic transition temperature of around 330 K, and clearly showed hysteresis loops even at room temperature. No evidence of magnetic secondary-phase MnAs formation in the host ZnSnAs2 thin films was observed within the limit of our measurement system. We also prepared a trilayer structure consisting of Mn-doped ZnSnAs2 layers and an undoped ZnSnAs2 intermediary layer as a preliminary structure for a tunneling magnetic junction. This structure was confirmed to demonstrate ferromagnetism at room temperature. The present results suggest that diluted ferromagnetic (Zn,Mn,Sn)As2 thin films are one of the most promising building blocks for InP-based spintronic devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-05-25
著者
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Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
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Jinbo Yoshio
Department Of Electrical Engineering Nagaoka University Of Technology
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Oomae Hiroto
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Asubar Joel
Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Asubar Joel
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Oomae Hiroto
Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Endo Hironori
Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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- Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-Based Spintronic Devices