Uchitomi Naotaka | Department Of Electrical Engineering Nagaoka University Of Technology
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概要
関連著者
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Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
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Jinbo Yoshio
Department Of Electrical Engineering Nagaoka University Of Technology
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Asubar Joel
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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JIANG Weihua
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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YATSUI Kiyoshi
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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Jiang Weihua
Extreme Energy-density Research Institute Nagaoka University Of Technology
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Yatsui K
Technological Univ. Nagaoka Nagaoka Jpn
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Uchitomi N
Research And Development Center Toshiba Corp.
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Yatsui Kiyoshi
Extreme Energy Density Research Institute Nagaoka University Of Technology
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Yamashita Kazuki
Department Of Electrical And Electronic Engineering Niigata University
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Jiang Weihua
Extreme Energy Density Research Institute, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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SUZUKI Tsuneo
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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SUEMATSU Hisayuki
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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末松 久幸
長岡技科大
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Jiang W
Extreme Energy-density Research Institute Nagaoka University Of Technology
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KATO Ariyuki
Department of Chemistry, Nagaoka University of Technology
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Yang Sung-chae
Extreme Energy-density Research Institute Nagaoka University Of Technolog
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Yang S‐c
Nagasaki Univ. Nagasaki Jpn
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Suematsu Hisayuki
Extreme Energy-density Research Institute Nagaoka University Of Technology
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IWASHITA Ryuma
Extreme Energy-Density Research Institute
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Suzuki Tsuneo
Extreme Energy-density Res. Inst. Nagaoka Univ. Of Technol.
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Suematsu Hisayuki
Extreme Energy-density Res. Inst. Nagaoka Univ. Of Technol.
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Shishido H
Extreme Energy-density Research Institute Nagaoka University Of Technology
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MIZUSHIMA Ichiro
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Oomae Hiroto
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Asubar Joel
Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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KIMOTO Koji
Advanced Electron Microscope Group, Advanced Nano- Characterization Center, National Institute for M
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MATSUI Yoshio
Advanced Electron Microscope Group, Advanced Nano- Characterization Center, National Institute for M
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Kimoto K
Advanced Electron Microscope Group Advanced Nano- Characterization Center National Institute For Mat
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Kimoto Koji
Hitachi Research Laboratory Hitachi Ltd.
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Hirai Makoto
Extreme Energy-density Research Institute Nagaoka University Of Technology
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Kimoto Koji
Advanced Electron Microscope Group Advanced Nano- Characterization Center National Institute For Mat
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Kimoto K
Hitachi Ltd. Ibaraki Jpn
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Hirai M
Extreme Energy-density Research Institute Nagaoka University Of Technology
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Sato Shin'ya
Department Of Electrical Engineering Nagaoka University Of Technology
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Miyano K
Toshiba Corp. Yokohama Jpn
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HAYASHI Kouichi
Institute for Materials Research, Tohoku University
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SHIMIZU Takashi
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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Hosokawa Shinya
Center For Materials Research Using Third-generation Synchrotron Facilities Hiroshima Institute Of T
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MIZUSHIMA Ichiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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MIYANO Kiyotaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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SATO Tsutomu
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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ARIKADO Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Kimoto Koji
National Institute For Materials Science
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Kimoto Koji
Advance Materials Laboratory National Institute For Materials Science
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ARIKADO Tsunetoshi
Extreme Energy-Density Research Institute
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SHAROON Ali
Extreme Energy-Density Research Institute, Nagaoka University of Technology
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SUZUKI Toshiaki
Product Development Laboratory, Meidensha Corporation
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SUZUKI Toshiaki
Development Dept. Mo. 4, Product Development Laboratory, Meidensha Corporation
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NISHINO Fumio
Department of Electrical Engineering, Nagaoka University of Technology
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TAKEI Tatsuya
Department of Electrical Engineering, Nagaoka University of Technology
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JINBO Yoshio
Department of Electrical Engineering, Nagaoka University of Technology
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Matsui Yoshio
Advanced Electron Microscope Group Advanced Nano- Characterization Center National Institute For Mat
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Sharoon Ali
Extreme Energy-density Research Institute Nagaoka University Of Technology
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Kato Ariyuki
Department Of Electrical Engineering Nagaoka University Of Technology
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Nishino Fumio
Department Of Electrical Engineering Nagaoka University Of Technology
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Takei Tatsuya
Department Of Electrical Engineering Nagaoka University Of Technology
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Kimoto Koji
Advanced Materials Laboratory National Institute For Materials Science
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Nakamura Shin-ichi
Center For Instrumental Analysis Aoyama Gakuin University
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Miyano Kiyotaka
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Kimoto Koji
Hitachi Research Laboratory Hitachi Ltd
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Matsui Yoshio
Advanced Electron Microscopy Group National Institute For Materials Science (nims)
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Matsui Yoshio
Advance Materials Laboratory National Institute For Materials Science
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Sato Tsutomu
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Hu Wen
Quantum Beam Science Directorate, JAEA, Sayo, Hyogo 679-5148, Japan
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Happo Naohisa
Graduate School of Information Sciences, Hiroshima City University, Hiroshima 731-3194, Japan
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Kimoto Koji
Advanced Electron Microscope Group, Advanced Nano- Characterization Center, National Institute for Materials Science
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Mizushima Ichiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Mizushima Ichiro
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kasahara Kiyotaka
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Saki Kazuo
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Miyano Kiyotaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Suzuki Motohiro
SPring-8, Japan Synchrotron Radiation Institute, Kouto, Sayo, Hyogo 679-5148, Japan
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Toyota Hideyuki
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Sasaki Tomonori
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Arikado Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Arikado Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sato Shin'ya
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
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Asubar Joel
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata 940-2188, Japan
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Uchitomi Naotaka
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Uchitomi Naotaka
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata 940-2188, Japan
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Uchitomi Naotaka
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
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Saki Kazuo
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kato Ariyuki
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata 940-2188, Japan
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Jinbo Yoshio
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Oomae Hiroto
Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Endo Hironori
Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Sato Tsutomu
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Microstructural Observation of Si_Ge_x Thin Films Prepared by Pulsed Ion-Beam Evaporation
- Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
- Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
- Optical Characterization of Heavily Sn-Doped GaAs_Sb_x Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates
- Three Dimensional Local Structure Analysis of ZnSnAs2:Mn by X-ray Fluorescence Holography
- Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2 Epitaxial Film on InP Substrates
- Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations
- Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Characterization of GaSb/AlGaSb Multi-Quantum-Well Structures Grown on Si(001) Substrates
- Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-Based Spintronic Devices