Characterization of GaSb/AlGaSb Multi-Quantum-Well Structures Grown on Si(001) Substrates
スポンサーリンク
概要
- 論文の詳細を見る
We prepared GaSb/AlGaSb multi-quantum-well (MQW) structures on n-type silicon (001) substrates by molecular beam epitaxy (MBE). To minimize dislocations in MQW layers and decrease the total thickness of the epitaxial layer, we employed not only an AlSb initiation layer but also a superlattice buffer layer (SL-BL) in a moderately thick GaSb buffer layer. For comparison we also fabricated other MQW structures on a considerably thick GaSb buffer layer without SL-BL. The obtained atomic force microscopy (AFM), transmission electron microscopy (TEM) images and high-resolution X-ray diffraction (XRD) patterns indicated that the definite MQW structures for both the samples and the quality of MQW layers prepared using SL-BL were generally better than those of the reference sample. The PL emission of these samples at about 1.30–1.55 μm was observed at room and low temperatures. The dependence of PL emission energy on GaSb well width was well explained by the finite square well potential model.
- 2008-01-25
著者
-
Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
-
Jinbo Yoshio
Department Of Electrical Engineering Nagaoka University Of Technology
-
Nakamura Shin-ichi
Center For Instrumental Analysis Aoyama Gakuin University
-
Toyota Hideyuki
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
-
Sasaki Tomonori
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
関連論文
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Microstructural Observation of Si_Ge_x Thin Films Prepared by Pulsed Ion-Beam Evaporation
- Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
- Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
- Optical Characterization of Heavily Sn-Doped GaAs_Sb_x Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates
- Transmission Electron Microscopy Observation on the Early Stages of Sn-Doped In_2O_3 Film Growth Deposited on Amorphous Carbon Films by DC Magnetron Sputtering
- Three Dimensional Local Structure Analysis of ZnSnAs2:Mn by X-ray Fluorescence Holography
- Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2 Epitaxial Film on InP Substrates
- Oxidation Resistance of Ti--Si--N and Ti--Al--Si--N Films Deposited by Reactive Sputtering Using Alloy Targets
- Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations
- Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Characterization of GaSb/AlGaSb Multi-Quantum-Well Structures Grown on Si(001) Substrates
- Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-Based Spintronic Devices
- Early Stages of Sn-Doped In