Oxidation Resistance of Ti--Si--N and Ti--Al--Si--N Films Deposited by Reactive Sputtering Using Alloy Targets

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概要

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• Ti--Si--N and Ti--Al--Si--N films, which possess high hardness due to the formation of a nanocomposite structure in the films, were deposited by reactive magnetron sputtering using alloy targets and then postannealed in air at temperatures ranging from 300 to 800 °C. The hardness of both the films decreased significantly as postannealing temperature increased. However, the hardness of Ti--Al--Si--N films postannealed up to 500 °C remained at more than 30 GPa, which was significantly higher than that of the Ti--Si--N films after the post annealings. Electron probe microanalyses and X-ray photoelectron spectroscopy revealed that Al₂O₃ phases were formed in the postannealed Ti--Al--Si--N films. Transmission electron microscopy with energy-dispersive X-ray analysis showed that the Al₂O₃ layer of the postannealed Ti--Al--Si--N films was formed 40 nm below the surface, whereas the depth of the TiO₂--SiO₂ layer of the postannealed Ti--Si--N films was 100 nm from the surface. These results indicate that Al₂O₃ phases existed at the surface of the Ti--Al--Si--N films and prevented the oxidation of the interior of the films during postannealing at high temperatures in air.

• 2011-07-25

著者

• 岡 伸人

  青学大理工

• 岡 伸人

  東大

• OKA Nobuto

  Graduate School of Science and Engineering, Aoyama Gakuin University

• SEINO Yutaka

  National Institute of Advanced Industrial Science and Technology

• Nakamura Shin-ichi

  Center For Instrumental Analysis Aoyama Gakuin University

• Oka Nobuto

  Graduate School Of Science And Engineering Aoyama Gakuin University

• 岡 伸人

  青山学院大学大学院理工学研究科

• Sato Yasushi

  Graduate School Of Science And Engineering Aoyama Gakuin University

• Shigesato Yuzo

  Graduate School Of Science And Engineering Aoyama Gakuin University

• Takahashi Kousuke

  Graduate School of Science and Engineering, Aoyama Gakuin University, Sagamihara 252-5258, Japan

• Yamaguchi Maho

  Graduate School of Science and Engineering, Aoyama Gakuin University, Sagamihara 252-5258, Japan

• Hattori Koichiro

  National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 3, Tsukuba, Ibaraki 305-8563, Japan

• Shigesato Yuzo

  Graduate School of Science and Engineering, Aoyama Gakuin University, Sagamihara 252-5258, Japan

• Seino Yutaka

  National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 3, Tsukuba, Ibaraki 305-8563, Japan

• Nakamura Shin-ichi

  Center for Instrumental Analysis, Aoyama Gakuin University, Sagamihara 252-5258, Japan

• Oka Nobuto

  Graduate School of Frontier Sciences, The University of Tokyo

• HATTORI Koichiro

  National Metrology Institute of Japan (NMIJ), National Institute of Advanced Industrial Science and Technology (AIST)

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