Structure and Internal Stress of Tin-Doped Indium Oxide and Indium–Zinc Oxide Films Deposited by DC Magnetron Sputtering

概要

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Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium–zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures ($P_{\text{tot}}$) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a $P_{\text{tot}}$ lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about $1.5 \times 10^{9}$ Pa, whereas the ITO films deposited at 1.5–3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a $P_{\text{tot}}$ range of 0.3–3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a $P_{\text{tot}}$ lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-12-15