Weak Localization and Electron-Electron Interaction Effects in Indium Zinc Oxide Films(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

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Electron weak localization (WL), electron-electron (el-el) interaction and electron-phonon (el-ph) scattering effects on the transport properties have been investigated for two to three-dimensional indium zinc oxide films. The temperature T dependence of the electron inelastic scattering rate 1/τ_<in> of two-dimensional films has been deduced from magnetoconductance data. The rate 1/τ_<in> well fits the sum of el-el and el-ph inelastic scattering rates, 1/τ_<in>=1/τ_<in,el-el>+1/τ_<in,el-ph>. Using the free electron model to determine the diffusion constant, we have obtained the effective electron mass m*≈0.55m_0 by fitting the theory for 1/τ_<in,el-el> to data at sufficiently low temperatures. Under a high magnetic field applied to suppress WL, the Hall coefficient varies, independently of the dimensionality, with temperature by about a two times larger rate than that of resistance. This result agrees well with the theory of Al'tshuler, Aronov, and Lee. At temperatures above≈10K, the T dependence of the inverse of mobility 1/μ is well described by the Gruneisen-Bloch formula with the use of the Debye temperature Θ_D≈750-760K. The el-ph coupling constant λ_<el-ph>≈1.1-1.3 has been obtained from the combination of data onτ_<in>(T), 1/μ(T), m*, and Θ_D.
2007-07-15