Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-03-15
著者
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Sato Shin'ya
Department Of Electrical Engineering Nagaoka University Of Technology
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Miyano K
Toshiba Corp. Yokohama Jpn
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Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
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MIZUSHIMA Ichiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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MIYANO Kiyotaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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SATO Tsutomu
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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ARIKADO Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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