Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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Saito Tomohiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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ARIKADO Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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NISHINOHARA Kazumi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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AKASAKA Yasushi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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YAGISHITA Atsushi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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MURAKOSHI Atsushi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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SUGURO Kyoichi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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Saito T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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