Low Leakage TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low-Temperature Oxidation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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Nakajima Kazuaki
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Matsuo Kouji
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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YAGISHITA Atsushi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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SUGURO Kyoichi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
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Yano H
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Suguro K
Toshiba Corporation Semiconductor Company
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Suguro Kyoichi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Yagishita A
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Matsuo K
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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OMOTO Seiichi
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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NAKAMURA Shinichi
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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MINAMIHABA Gaku
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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YANO Hiroyuki
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Nakamura S
Univ. California California Usa
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Nakajima Kazuaki
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Omoto Seiichi
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Minamihaba Gaku
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Suguro Kyoichi
Toshiba Corporation Semiconductor Company
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