Reliable High-k TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Matsuo Kouji
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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NAKAJIMA Kazuaki
Microelectronics Engineering Labs., Toshiba Corporation
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YAGISHITA Atsushi
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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SUGURO Kyoichi
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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YANO Hiroyuki
Microelectronics Engineering Laboratory, Toshiba Corporation
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Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
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Yano H
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Suguro K
Toshiba Corporation Semiconductor Company
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Yagishita A
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Matsuo K
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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NAKAMURA Shinichi
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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MINAMIHABA Gaku
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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MATSUO Kohji
Microelectronics Engineering Laboratory, Toshiba Corporation
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OMOTO Seiichi
Microelectronics Engineering Laboratory, Toshiba Corporation
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NAKAMURA Shinich
Microelectronics Engineering Laboratory, Toshiba Corporation
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MINAMIHABA Gaku
Microelectronics Engineering Laboratory, Toshiba Corporation
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Nakamura S
Univ. California California Usa
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Nakajima Kazuaki
Microelectronics Engineering Labs. Toshiba Corporation
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Omoto Seiichi
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Minamihaba Gaku
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Suguro Kyoichi
Toshiba Corporation Semiconductor Company
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