Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si_3N_4 Film on Tungsten for Advanced Low-Resistivity "Polymetal" Gate Interconnects
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Saito Tomohiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Miyano K
Toshiba Corp. Yokohama Jpn
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NAKAJIMA Kazuaki
Microelectronics Engineering Labs., Toshiba Corporation
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SUGURO Kyoichi
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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AKASAKA Yasushi
Microelectronics Engineering Laboratory, Toshiba Corp.
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MIYANO Kiyotaka
Microelectronics Engineering Laboratory, Toshiba Corp.
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TAKAHASHI Mamoru
Research and Development Center, Toshiba Corp.
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TANAKA Satoko
Semiconductor Group, Toshiba Corp.
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Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
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Saito T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Suguro K
Toshiba Corporation Semiconductor Company
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Yagishita A
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Akasaka Yasushi
Microelectronics Engineering Laboratory Toshiba Corporation
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Miyano Kiyotaka
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Nakajima Kazuaki
Microelectronics Engineering Labs. Toshiba Corporation
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Saito T
School Of Engineering Nagoya University
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Takahashi Mamoru
Research And Development Center Toshiba Corp.
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Suguro Kyoichi
Toshiba Corporation Semiconductor Company
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