Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 μm CMOS and Beyond

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Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
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Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 μm MOSFETs
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Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 μm CMOS and Beyond
Small Angle Scattering of Neutrons and X-Rays from Aqueous Dispersions of Dipalmitoyl Phosphatidylcholine
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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates
Low Leakage TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low-Temperature Oxidation
Reliable High-k TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation
Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects
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Low-Temperature Plasma-Enhanced Chemical Vapor Deposition of Crystal Silicon Film from Dichlorosilane
Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
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Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion
Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion
Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications
10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing
New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe
Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_ Icosahedron as a Double Acceptor
Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates

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