Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_<12> Icosahedron as a Double Acceptor
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概要
- 論文の詳細を見る
A high hole concentration region of about 1×10^<21> cm^<-3> was generated without any post-annealing by the implantation of high doses of boron into silicon substrates. X-ray photoelectron spectroscopy (XPS) measurement and Fourier transform IR spectroscopy (FTIR) absorption spectra revealed that B_<12> icosahedra were created in asimplanted samples. A new model of the generation of holes is proposed in which B\<12> icosahedron acts as a double acceptor.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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MURAKOSHI Atsushi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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Yoshiki Masahiko
R&d Center Toshiba Corp.
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Yoshiki Masahiko
Environmental Engineering Laboratory R&d Center Toshiba Corporation
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Mizushima I
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Hotta Masaki
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Watanabe Masaharu
Ulsi Research Center Toshiba Corporation
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Murakoshi A
Toshiba Corp. Yokohama Jpn
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MIZUSHIMA Ichiro
ULSI Research Laboratories, Research and Development Center, Toshiba Corp.
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HOTTA Masaki
ULSI Research Laboratories, Research and Development Center, Toshiba Corp.
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KASHIWAGI Masahiro
ULSI Research Laboratories, Research and Development Center, Toshiba Corp.
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Kashiwagi M
Saitama Univ. Saitama Jpn
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Watanabe Masaharu
Ulsi Research Laboratories Research And Development Center Toshiba Corp.:(present Address)komatsu El
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