Ru Electrode Deposited by Sputtering in Ar/O_2 Mixture Ambient
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-10-15
著者
-
Aoyama T
Toshiba Corp. Yokohama Jpn
-
AOYAMA Takahiro
Daihen Co.
-
Aoyama T
Hitachi Ltd. Ibaraki Jpn
-
AOYAMA Tomonori
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
-
MURAKOSHI Atsushi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
-
IMAI Keitaro
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
-
Imai Keitaro
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Toshiba Corporation
-
Imai K
Toyota Physical And Chemical Research Institute
-
Murakoshi A
Toshiba Corp. Yokohama Jpn
-
Aoyama Tomonori
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Semiconductor Company To
関連論文
- In Situ Formation of Ohmic Contact Electrodes of Cu and Ag onto the Fractured Surface of (Bi, Pb)-Sr-Ca-Cu-O Ceramics
- Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
- Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
- Ru Electrode Deposited by Sputtering in Ar/O_2 Mixture Ambient
- Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O_2 Mixture Ambient
- High Tilt Angle Ion Implantation into Polycrystalline Si Gates
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Nitrogen Distribution and Chemical Bonding State Analyses in Oxynitride Film by Spatially Resolved Electron Energy Loss Spectroscopy (EELS)
- Chemical shift mapping of Si L and K edges using spatially resolved EELS and energy-filtering TEM
- Two-Dimensional Boron Analysis in Borophosphosilicate Glass Film Using Transmission Electron Microscope with Imaging Filter
- Single Crystal X-Ray Structure Analysis of Bi_2(Sr, Ca)_2CuO_x and Bi_2(Sr, Ca)_3Cu_2O_x Superconductors : Electrical Properties of Condensed Matter
- Influence of Lattice Distortion and Oxygen Defects in BST Films for Memory Capacitors
- (Ba, Sr)TiO_3 Stacked Capacitor Technology for 0.13μm-DRAMs and Beyond
- Electrical Properties of Regrowth ZnSe Homointerfaces Formed by Molecular Beam Epitaxy
- Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process
- Characterization of Epitaxial ZnSe/GaAs(100) Interface Properties and Their Control by (HF+Se)-Pretreatment
- Characterization and Control of MBE-ZnSe/GaAs(100) Substrate Interface and Regrown ZnSe/ZnSe Homointerface
- Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
- Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 μm CMOS and Beyond
- Scanning Tunneling and Atomic Force Microscopy of T4 Bacteriophage and Tobacco Mosaic Virus
- Superconductivity and Crystal Structure of LaBa_2Cu_O_y Compounds
- Si-SiO_2 Interface Structures : Chemical Shifts in Si 2p Photoelectron Spectra : Surfaces, Interfaces and Films
- Structure of the High T_c Superconductor, Ba_2LaCu_O_ : Studies on La-Ba Ordering and Oxygen Defects
- Properties of High Heat-Resistance μc-SiC_x:H Emitter Silicon HBT's
- Silicon HBT with a Low-Resistivity Amorphous SiC_x Emitter
- Effect of Carbonic Anhydrase II in Molten Globule State on Physical Properties of Dimyristoylphosphatidylcholine Liposme
- Ultrasonic Properties of a Binary System of a Soluble Protein, α-Lactalbumin and Dimyristoyl Phosphatidylcholine Membrane
- Overdamped NbN Josephson Junctions Based on Nb/AlO_x/Nb Trilayer Technology
- Effects of Annealing Conditions on Superconducting Properties of BiCaSrCu_2O_x Ceramics Prepared by the Melt Quenching Method : Electrical Properties of Condensed Matter
- High-T_c Superconducting Glass Ceramics Based on the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- Preparation of High-T_c Superconducting Bi-Ca-Sr-Cu-O Ceramics by the Melt Quenching Method : Electrical Properties of Condensed Matter
- Crystalline Phases in Superconductor Ba-Y-Cu-O with High T_c Prepared by Melting Method
- Liquid Quenched Superconductor Ba-Y-Cu-O with T_=88 K and AC Josephson Effect at 77 K
- Study of L_ dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Scanning Tunneling Microscopy Study of Submicron-Sized pn Junction on Si(001) Surfaces
- Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
- Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing
- Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
- Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
- Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded DRAMs
- Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing
- Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium
- Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System
- 1P377 Discrimination of G-protein by analyzing physicochemical properties of N- and C- terminal regions of G-proteins(15. Cellular signal transduction,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing
- TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
- Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr) TiO_3 Capacitors for Future Dynamic Random Access Memories
- Chemical Vapor Deposition of Ru and Its Application in (Ba, Sr)TiO3 Capacitors for Future DRAM
- Homogeneous Heteroepitaxial NiSi_2 Formation on (100)Si
- Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_ Icosahedron as a Double Acceptor
- The Contact Resistance of the YBa2Cu3O7-δ-Metal Film System