Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium

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概要

• 論文の詳細を見る

• Ruthenium (Ru) films were deposited by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl)ruthenium (Ru(C_2H_5C_5H_4)_2). The crystalline structure, resistivity and residual impurities in the Ru films were investigated. The Ru films were polycrystalline and had a columnar structure; they showed a low resistivity of about 20 μΩ cm, which is sufficiently low for them to be used as capacitor electrodes.

• 社団法人応用物理学会の論文
• 1999-10-01

著者

• AOYAMA Tomonori

  ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation

• Eguchi Kazuhiro

  Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Semiconductor Company To

• Aoyama Tomonori

  Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Semiconductor Company To

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• Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium
• Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr) TiO_3 Capacitors for Future Dynamic Random Access Memories
• Homogeneous Heteroepitaxial NiSi_2 Formation on (100)Si

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