Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr) TiO_3 Capacitors for Future Dynamic Random Access Memories
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概要
- 論文の詳細を見る
Ru films were fabricated by chemical vapor deposition using Ru(C_5H_5)_2 and O_2. The deposition of Ru film was controlled by the surface reaction kinetics as the rate limiting step with activation energy of 2.48 eV below 250℃ and by the mass transport process above 250℃. Ru films had a polycrystalline structure and showed low resistivity of about 12μΩcm. Ru films deposited at 230℃ showed excellent step coverage. We applied Ru films prepared by chemical vapor deposition to the bottom electrode of a Ba_<0.25>Sr_<0.75>TiO_3 capacitor and obtained good electrical characteristics.
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Aoyama T
Toshiba Corp. Yokohama Jpn
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Aoyama T
Hitachi Ltc. Ibaraki Jpn
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Aoyama Tomonori
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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AOYAMA Tomonori
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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KIYOTOSHI Masahiro
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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Yamazaki S
Toshiba Corp. Yokohama Jpn
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Eguchi K
Tokyo Metropolitan Univ. Tokyo Jpn
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Eguchi Kazuhiro
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Semiconductor Company To
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KIYOTOSHI Masahiro
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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YAMAZAKI Soichi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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Kiyotoshi Masahiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Aoyama Tomonori
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Semiconductor Company To
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