Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O_2 Mixture Ambient

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-02-15

著者

• Aoyama T

  Toshiba Corp. Yokohama Jpn

• AOYAMA Takahiro

  Daihen Co.

• Aoyama T

  Hitachi Ltd. Ibaraki Jpn

• AOYAMA Tomonori

  ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation

• MURAKOSHI Atsushi

  ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation

• IMAI Keitaro

  ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation

• KOIKE Mitsuo

  Environmental Engineering Laboratory, Research and Development Center, Toshiba Corporation

• TAKENO Shiro

  Environmental Engineering Laboratory, Research and Development Center, Toshiba Corporation

• Koike Mitsuo

  Environmental Engineering Laboratory Research And Development Center Toshiba Corporation

• Koike Mitsuo

  Environmental Engineering Laboratory R&d Center Toshiba Corporation

• Imai Keitaro

  Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Toshiba Corporation

• Imai K

  Toyota Physical And Chemical Research Institute

• Takeno Shiro

  Environmental Engineering And Analysis Center R & D Center

• Takeno Shiro

  Environmental Engineering Laboratory Research And Development Center Toshiba Corporation

• Murakoshi A

  Toshiba Corp. Yokohama Jpn

• Aoyama Tomonori

  Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Semiconductor Company To

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