Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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KOIKE Mitsuo
Environmental Engineering Laboratory, Research and Development Center, Toshiba Corporation
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Koike Mitsuo
Environmental Engineering Laboratory Toshiba Corporation
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Koike Mitsuo
Environmental Engineering Laboratory R&d Center Toshiba Corporation
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Koyama M
Advanced Lsi Technology Laboratory Toshiba Corporation
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Tomita M
Environmental Engineering Laboratory R&d Center Toshiba Corporation
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TOMITA Mitsuhiro
Environmental Engineering Laboratory, R&D Center, Toshiba Corporation
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SAKATA Atsuko
Microelectronics Engineering Laboratory, Toshiba Corporation
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KOYAMA Masato
ULSI Research Laboratories, Toshiba Corporation
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KUNISHIMA Iwao
ULSI Research Laboratories, Toshiba Corporation
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Koike M
Toshiba Corp. Yokohama Jpn
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Kunishima I
Toshiba Corp. Yokohama Jpn
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Kunishima Iwao
Ulsi Research Center Toshiba Corporation
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Sakata Akira
Microelectronics Engineering Laboratory Toshiba Corporation
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Tomita Mitsuhiro
Environmental Engineering Laboratory, R&D Center, Toshiba Corporation
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