Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• Takagi S

  Process & Manufacturing Center Semiconductor Company Toshiba Corporation

• YAMAGUCHI Takeshi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• TAKAGI Shin-ichi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• Koyama Masato

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• Yamaguchi T

  Nikon Corp. Tokyo Jpn

• Takagi Shin-ichi

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation

• Koyama Masato

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Koyama M

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Yamaguchi Takeshi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Takagi Shin-ichi

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation

関連論文

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• Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures
• A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs
• A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs
• Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
• Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
• Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
• Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
• New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
• Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
• Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
• Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
• Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
• Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
• Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
• Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface
• Estimation of Spatial Extent of a Defect Cluster in Si Induced by Single Ion lrradiation
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Phenomenological Studies in Laser Cladding. Part II. : Thermometrical Experiments on the Melt Pool
• Phenomenological Studies in Laser Cladding. Part I. : Time-Resolved Measurements of the Absorptivity of Metal Powder
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• Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions
• Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
• Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
• Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
• Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
• High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
• Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
• Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon
• The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
• Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
• Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
• Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
• Dielectric Constant Behavior of Hf-O-N System
• Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
• Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
• Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
• Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
• Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
• Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
• Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
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• Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
• Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
• Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
• Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
• Physical Understanding of Determinant Factors for φeff on La-based High-k
• Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime
• Impact of Strained-Si Channel on CMOS Circuit Performance under the Sub-100nm Regime
• Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
• Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N2O and NO Oxynitrides
• Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in MOSFETs with N_2O and NO Oxynitrides
• Destruction and Recovery of Superconductivity in Bi-Pb-Sr-Ca-Cu-O Synthesized under High Pressure
• Impact of Two-Dimensional Structure of nMOSFETs on Direct Tunnel Gate Current
• Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current
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• High Dielectric Constant of a Mixture of N-Alkyl Aliphatic Amides
• Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
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• Dielectric Constant Behavior of Hf–O–N System
• Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current
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• Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
• Re-Examination of Performance and Reliability Degradation in Metal--Oxide--Nitride--Oxide--Semiconductor Memory with Ultrathin SiN Charge Trap Layers
• Subband Structure Engineering for Realizing Scaled CMOS with High Performance and Low Power Consumption(Special Issue on Advanced Sub-0.1μm CMOS Devices)
• Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
• Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
• Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process
• Bipolar Resistive Switch Effects in Calcium Fluoride Thin Films Deposited on Silicon Bottom Electrodes

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