Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Takagi S
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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ISHIHARA Takamitsu
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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