SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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UCHIDA Ken
Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation
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OHBA Ryuji
Advanced LSI Technology Laboratory, Toshiba Corporation
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Ohba R
Advanced Lsi Technology Laboratory Toshiba Corporation
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Koga J
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Uchida K
Advanced Lsi Technology Laboratory Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Toriumi Akira
Mirai-asrc Aist
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Uchida Ken
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Corporate R&d Center Toshiba Corporation
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Ohba Ryuji
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
関連論文
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- Performance and Degradation in Single Grain-size Pentacene Thin-Film Transistors
- Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
- Origin of Structural Phase Transformation of SiO_2-doped HfO_2
- Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
- Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
- Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
- Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
- Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
- Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
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- Thermally Robust Y_2O_3/Ge MOS Capacitors
- Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
- Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
- A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
- Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
- Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
- Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
- Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
- Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
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- Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
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- The effect of side-traps on ballistic transistor in Kondo regime
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- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics
- Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
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- Analysis of Plane Wave Scattering by a Conducting Thin Plate and a Criterion for Ray Tracing Method
- Wiener-Hopf Solutions to Electromagnetic Wave Scattering by a Finite Conducting Thin Plate in Case of a Line Source
- Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
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- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
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