Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue: Solid State Devices & Materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Koga J

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

関連論文

• Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
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• Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
• Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
• Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
• Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
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• SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
• Challenge to new silicon devices

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