Accurate Evaluation of Inversion-Layer Mobility and Experimental Extraction of Local Strain Effect in sub-μm Si MOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
-
Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
-
Koga Junji
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Ohuchi Kazuya
Advanced Cmos Technology Department Soc R&d Center Semiconductor Company Toshiba Corporation
-
Tanaka Chika
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
関連論文
- Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
- Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
- Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
- Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
- Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
- Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
- Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
- Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
- Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
- Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_Ge_x)) Gate
- Accurate Evaluation of Inversion-Layer Mobility and Experimental Extraction of Local Strain Effect in sub-μm Si MOSFETs
- Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
- Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
- Silicon Planar Esaki Diode Operating at Room Temperature
- SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
- Challenge to new silicon devices
- Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
- Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
- Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
- Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
- Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
- Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
- Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors
- Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process
- Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors