Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Numata Toshinori
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Tanaka Chika
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ota Kensuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Ishikawa Takayuki
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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