Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

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概要

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• The inversion-layer electron mobility limited by Coulomb scattering due to interface states ($\mu_{\text{it}}$) and substrate impurities ($\mu_{\text{sub}}$) are experimentally evaluated on Si n-type metal–oxide–semiconductor field-effect transistors (MOSFETs) at the surfaces of Si(100), (110), and (111). The inversion-layer mobility is measured by the split $C$–$V$ method and $\mu_{\text{it}}$ and $\mu_{\text{sub}}$ are extracted using Matthiessen’s rule. $\mu_{\text{it}}$ exhibits almost the same behavior irrespective of the different surface orientations, while $\mu_{\text{sub}}$ has the surface orientation dependence. The very weak surface orientation dependence of $\mu_{\text{it}}$ are due to the correlation between the inversion layer thickness ($Z_{\text{ave}}$) determined by the normal mass ($m_{z}$) and the weighed average value of conductivity mass ($m_{\text{c{\_}ave}}$) under multi valley occupation. The surface orientation dependence of $\mu_{\text{sub}}$ is basically explained by the $m_{\text{c{\_}ave}}$ difference.

• 2010-04-25

著者

• Numata Toshinori

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Corporate Research & Development Center

• Nakabayashi Yukio

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Ken Uchida

  Depertment of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan

• Toshinori Numata

  Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Shinichi Takagi

  Depertment of Electronic Engineering, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-0032, Japan

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• Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass
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• Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule

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