Tanaka Chika | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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概要
- TANAKA Chikaの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporationの論文著者
関連著者
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Tanaka Chika
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Numata Toshinori
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ota Kensuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ohuchi Kazuya
Advanced Cmos Technology Department Soc R&d Center Semiconductor Company Toshiba Corporation
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Nakabayashi Yukio
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Uchida Ken
Department Of Biology Faculty Of Science Kumamoto University
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Ota Kensuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Numata Toshinori
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Tanaka Chika
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Saitoh Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Ishikawa Takayuki
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Tanaka Chika
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan.
著作論文
- Accurate Evaluation of Inversion-Layer Mobility and Experimental Extraction of Local Strain Effect in sub-μm Si MOSFETs
- Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
- Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
- Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors