Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-03-18

著者

• Tanaka Chika

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Tanaka Chika

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan.

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• Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
• Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

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