Koga Junji | Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

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著作論文

Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_Ge_x)) Gate
Accurate Evaluation of Inversion-Layer Mobility and Experimental Extraction of Local Strain Effect in sub-μm Si MOSFETs
Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors
Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

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