Sugiyama Naoharu | Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

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著作論文

Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures
A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs
A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs
Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices
Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs

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