Sugiyama Naoharu | Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
スポンサーリンク
概要
- 同名の論文著者
- Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
関連著者
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SUZUKI Masamichi
Environmental Engineering & Analysis Center, Corporate R&D Center, Toshiba Corporation
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TAKAGI Sin-ichi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Mizuno Tomohisa
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sugiyama Naoharu
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Masamichi
Environmental Engineering & Analysis Center, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Sin-ichi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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MIZUNO Tomohisa
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
著作論文
- Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs