TAKAGI Sin-ichi | Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
スポンサーリンク
概要
関連著者
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SUZUKI Masamichi
Environmental Engineering & Analysis Center, Corporate R&D Center, Toshiba Corporation
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TAKAGI Sin-ichi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Takagi S
Mirai-national Institute Of Advanced Industrial Science And Technology (aist)
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MIZUNO Tomohisa
Advanced LSI Technology Laboratory, Toshiba Corporation
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SUGIYAMA Naoharu
Advanced LSI Technology Laboratory, Toshiba Corporation
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Mizuno Tomohisa
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sugiyama Naoharu
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Masamichi
Environmental Engineering & Analysis Center, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Sin-ichi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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MIZUNO Tomohisa
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
著作論文
- Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs
- Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs