Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices

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概要

• 論文の詳細を見る

• A novel nonvolatile memory tunnel layer structure is proposed in which a Si nanocrystalline layer lies between double tunnel oxides. By Si nanocrystal size downscaling to 2 nm, the new double junction tunnel attains a remarkable $3\times 10^{6}$ times retention improvement while keeping high-speed write/erase compared to single tunnel oxide. Based on Si nanocrystal size confirmation by transmission electron microscope (TEM), we show quantitatively that the advantage is due to Coulomb blockade and quantum confinement, and smaller Si nanocrystal will lead to greater improvement. We clarify a characteristic effect in double junction tunnel, tunnel penetration disappearance, which is extremely advantageous for nonvolatile memory applications and never occurs in other multilayer dielectrics structures. The double tunnel junction using Si nanocrystalline layer is very promising for future memory.

• 2011-04-25

著者

• Sugiyama Naoharu

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Matsumoto Mari

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Mitani Yuichiro

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Fujita Shinobu

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Matsumoto Mari

  Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Sugiyama Naoharu

  Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Ohba Ryuji

  Flash Memory Device Technology Department, Center for Semiconductor Research and Development, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Fujita Shinobu

  Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Fujita Shinobu

  Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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