The effect of side-traps on ballistic transistor in Kondo regime
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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TANAMOTO Tetsufumi
Corporate R&D Center, Toshiba Corporation
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UCHIDA Ken
Corporate R&D Center, Toshiba Corporation
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FUJITA Shinobu
Corporate R&D Center, Toshiba Corporation
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TANAMOTO Tetsufumi
Advanced LSI Technology Laboratory, Toshiba Corporation
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FUJITA Shinobu
Advanced LSI Technology Laboratory, Toshiba Corporation
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Tanamoto Tetsufumi
Corporate R&d Center Toshiba Corporation
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Fujita Shinobu
Corporate R&d Center Toshiba Corporation
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Fujita Shinobu
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida K
Advanced Lsi Technology Laboratory Toshiba Corporation
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Tanamoto Tetsufumi
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Corporate R&d Center Toshiba Corporation
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