Fano-Kondo effect in three quantum dots aiming at charge qubit measurement

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• TANAMOTO Tetsufumi

  Corporate R&D Center, Toshiba Corporation

• FUJITA Shinobu

  Corporate R&D Center, Toshiba Corporation

• Tanamoto Tetsufumi

  Corporate R&d Center Toshiba Corporation

• Fujita Shinobu

  Corporate R&d Center Toshiba Corporation

• NISHI Yoshifumi

  Corporate R&D Center, Toshiba Corporation

• Nishi Yoshifumi

  Corporate R&d Center Toshiba Corporation

関連論文

• The effect of side-traps on ballistic transistor in Kondo regime
• Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
• Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
• Fano-Kondo effect in three quantum dots aiming at charge qubit measurement
• Measurement of Two-Qubit States using a Two-Island Single Electron Transistor
• High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
• Robustness of Charge-Qubit Cluster States to Double Quantum Point Contact Measurement
• Steady-State Solution for Dark States Using a Three-Level System in Coupled Quantum Dots
• Detection of a Charged Two-Level System by Using the Kondo and the Fano--Kondo Effects in Quantum Dots
• Detection of a Charged Two-Level System by Using the Kondo and the Fano-Kondo Effects in Quantum Dots (Special Issue : Solid State Devices and Materials)

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