Tanamoto Tetsufumi | Corporate R&d Center Toshiba Corporation

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概要

• TANAMOTO Tetsufumiの詳細を見る
• 同名の論文著者
• Corporate R&d Center Toshiba Corporationの論文著者

関連著者

• Tanamoto Tetsufumi

  Corporate R&d Center Toshiba Corporation

• Fujita Shinobu

  Corporate R&d Center Toshiba Corporation

• TANAMOTO Tetsufumi

  Corporate R&D Center, Toshiba Corporation

• FUJITA Shinobu

  Corporate R&D Center, Toshiba Corporation

• Hu Xuedong

  Department Of Physics University At Buffalo Suny

• Nori Franco

  Advanced Science Institute, RIKEN, Wako, Saitama 351-0198, Japan

• Liu Yu-xi

  Institute of Microelectronics, Tsinghua University, Beijing 100084, China

• Ikegawa Sumio

  Corporate Research & Development Center Toshiba Corporation

• UCHIDA Ken

  Corporate R&D Center, Toshiba Corporation

• TANAMOTO Tetsufumi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• FUJITA Shinobu

  Advanced LSI Technology Laboratory, Toshiba Corporation

• Fujita Shinobu

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Uchida K

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Yoda Hiroaki

  Corporate Research & Development Center Toshiba Corporation

• NISHI Yoshifumi

  Corporate R&D Center, Toshiba Corporation

• HU Xuedong

  Department of Physics, University at Buffalo, SUNY

• Tanamoto Tetsufumi

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Nishi Yoshifumi

  Corporate R&d Center Toshiba Corporation

• Ono Keiji

  Low Temperature Physics Laboratory Riken

• Uchida Ken

  Corporate R&d Center Toshiba Corporation

• Matsumoto Mari

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Shimomura Naoharu

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Yoda Hiroaki

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Ikegawa Sumio

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Ono Keiji

  Low Temperature Physics Laboratory, RIKEN, Wako, Saitama 351-0198, Japan

• Shimomura Naoharu

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Tetsufumi Tanamoto

  Corporate R&D center, Toshiba Corporation, 1 Komukai-Toshiba cho, Saiwai-ku, Kawasaki 212-8582, Japan

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著作論文

• The effect of side-traps on ballistic transistor in Kondo regime
• Fano-Kondo effect in three quantum dots aiming at charge qubit measurement
• Measurement of Two-Qubit States using a Two-Island Single Electron Transistor
• High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
• Robustness of Charge-Qubit Cluster States to Double Quantum Point Contact Measurement
• Steady-State Solution for Dark States Using a Three-Level System in Coupled Quantum Dots
• Detection of a Charged Two-Level System by Using the Kondo and the Fano--Kondo Effects in Quantum Dots
• Detection of a Charged Two-Level System by Using the Kondo and the Fano-Kondo Effects in Quantum Dots (Special Issue : Solid State Devices and Materials)

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