Uchida K | Advanced Lsi Technology Laboratory Toshiba Corporation
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概要
関連著者
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Uchida K
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Corporate R&d Center Toshiba Corporation
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UCHIDA Ken
Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation
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Uchida Ken
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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OHBA Ryuji
Advanced LSI Technology Laboratory, Toshiba Corporation
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Ohba R
Advanced Lsi Technology Laboratory Toshiba Corporation
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Koga J
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Toriumi Akira
Mirai-asrc Aist
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Ohba Ryuji
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
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TATEIBA Mitsuo
Kyushu University
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Tateiba M
Department Of Computer Science And Communication Engineering Kyushu University
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Fukuma T
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Fujii T
Japan Telecom Co. Ltd. Tokyo Jpn
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Fujii T
Nikon Corporation
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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FUJII Toru
Nikon Corporation
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SUGIYAMA Naoharu
Advanced LSI Technology Laboratory, Toshiba Corporation
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FUJITA Shinobu
Advanced LSI Technology Laboratory, Toshiba Corporation
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Fujita Shinobu
Corporate R&d Center Toshiba Corporation
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Fujita Shinobu
Advanced Lsi Technology Laboratory Toshiba Corporation
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UCHIDA Kazunori
The Faculty of Information Engineering at Fukuoka Institute of Technology
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HATA Masaharu
The authors are with NTT Mobile Communications Network Inc.
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Imai T
The Authors Are With Ntt Mobile Communications Network Inc.
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Hata M
Ntt Mobile Communications Network Inc. Tokyo Jpn
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Fujii T
Department Of Electronic Science And Engineering Kyoto University
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Kazunori
The Faculty Of Engineering At Fukuoka Institute Of Technology
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Takagi S
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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TANAMOTO Tetsufumi
Advanced LSI Technology Laboratory, Toshiba Corporation
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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IMAI Tetsuro
NTT Mobile Communications Network Inc.
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FUJII Teruya
NTT Mobile Communications Network Inc.
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HATA Masaharu
NTT Mobile Communications Network Inc.
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UCHIDA Kazunori
Faculty of Information Engineering, Fukuoka Inst. of Tech.
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Matsuzawa K
Toshiba Corp. Yokohama‐shi Jpn
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MAEDA Hiroshi
Production Engineering Research Laboratory, Matsushita Electric Works, Ltd.
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Maeda H
Fukuoka Inst. Of Technol. Fukuoka‐shi Jpn
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Tateiba Mitsuo
The Department Of Computer Science And Communication Engineering Faculty Of Information Science And
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Tanamoto Tetsufumi
Advanced Lsi Technology Laboratory Toshiba Corporation
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YOON Kwang-yeol
the Department of Electric Engineering, Keimyung University
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Uchida Kazunori
Faculty Of Engineering Fukuoka Institute Of Technology
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Fujita Shinobu
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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ISHIHARA Takamitsu
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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TAKAGI Shin-ichi
Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo
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MATSUZAWA Kazuya
Advanced LSI Technology Laboratory, Toshiba Corporation
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TANAMOTO Tetsufumi
Corporate R&D Center, Toshiba Corporation
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UCHIDA Ken
Corporate R&D Center, Toshiba Corporation
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FUJITA Shinobu
Corporate R&D Center, Toshiba Corporation
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MATSUMOTO Mari
Advanced LSI Technology Laboratory, Toshiba Corporation
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YASUDA Shinichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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MAEDA Hiroshi
Faculty of Pharmaceutical Sciences, Okayama University
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Matsumoto Mari
Advanced Lsi Technology Laboratory Toshiba Corporation
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Yasuda Shinichi
Advanced Lsi Technology Laboratory Toshiba Corporation
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UCHIDA Kazunori
Fukuoka Institute of Technology
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Tanamoto Tetsufumi
Corporate R&d Center Toshiba Corporation
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MAEDA Hiroshi
The Faculty of Information Engineering at Fukuoka Institute of Technology
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UCHIDA Kazunori
The author is with the Faculty of Information Engineering at Fukuoka Institute of Technology
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IMAI Tetsuro
The authors are with NTT Mobile Communications Network Inc.
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FUJII Teruya
The authors are with NTT Mobile Communications Network Inc.
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Yoon Kwang-yeol
Department Of Electronic Engineering Keimyung University
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Tateiba Mitsuo
Department Of Computer Science And Communication Engineering Graduate School Of Information Science
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UCHIDA Ken
The authors are with Advanced LSI Technology Laboratory, Toshiba Corporation
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KOGA Junji
The authors are with Advanced LSI Technology Laboratory, Toshiba Corporation
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OHBA Ryuji
The authors are with Advanced LSI Technology Laboratory, Toshiba Corporation
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YOON Kwang-yeol
Kyushu University
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Takagi Shin-ichi
Department Of Electrical Engineering University Of Tokyo
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation
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Maeda Hiroshi
Faculty Of Pharmaceutical Sciences Okayama University:kumamoto University Medical School
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Maeda Hiroshi
The Faculty Of Engineering Kyushu University
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Maeda Hiroshi
Faculty Of Engineering Kyushu Institute Of Technology
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Tanamoto Tetsufumi
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
著作論文
- Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- The effect of side-traps on ballistic transistor in Kondo regime
- Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
- Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
- Analysis of Electromagnetic Wave Scattering by a Conducting Thin Plate and Image Coefficient for Ray Tracing Method
- Analysis of Plane Wave Scattering by a Conducting Thin Plate and a Criterion for Ray Tracing Method
- Wiener-Hopf Solutions to Electromagnetic Wave Scattering by a Finite Conducting Thin Plate in Case of a Line Source
- Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
- Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
- SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
- A Numerical Simulation of Low-Grazing-Angle Scattering from Ocean-Like Dielectric Surfaces
- Ray Tracing Analysis of Large-Scale Random Rough Surface Scattering and Delay Spread
- FVTD Simulation for Random Rough Dielectric Surface Scattering at Low Grazing Angle(Special Issue on Problems of Random Scattering and Electromagnetic Wave Sensing)
- Rough Surface and Delay Spread
- A New Design Scheme for Logic Circuits with Single Electron Transistors