Ohba Ryuji | Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

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著作論文

Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
Device Simulations in Coupled Floating-Gate Memories
Non-Stoichiometric SixN Metal–Oxide–Semiconductor Field-Effect Transistor for Compact Random Number Generator with 0.3 Mbit/s Generation Rate

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