Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi Akira

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Toriumi Akira

  Advanced Lsi Technology Toshiba Corporation

• SUGIYAMA Naoharu

  Advanced LSI Technology Laboratory, Toshiba Corporation

• KOGA Junji

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• UCHIDA Ken

  Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation

• OHBA Ryuji

  Advanced LSI Technology Laboratory, Toshiba Corporation

• Sugiyama N

  Mirai-association Of Super-advanced Electronics Technology (aset)

• Sugiyama Naoharu

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Ohba R

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Koga J

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Koga Junji

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Uchida K

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Toriumi Akira

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Sugiyama Naoharu

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Toriumi Akira

  Mirai-asrc Aist

• Uchida Ken

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Uchida Ken

  Corporate R&d Center Toshiba Corporation

• Ohba Ryuji

  Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Uchida Ken

  Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

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