Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• KITA Koji

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• TORIUMI Akira

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi A

  Univ. Tokyo Tokyo Jpn

• Toriumi Akira

  The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar

• Toriumi Akira

  Advanced Lsi Technology Toshiba Corporation

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• TOMIDA Kazuyuki

  Research Fellow of the Japan Society for the Promotion of Science

• TOMIDA Kazuyuki

  Department of Materials Engineering, School of Engineering, The University of Tokyo

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Toriumi Akira

  Department Of Materials Engineering The University Of Tokyo

• Kita Koji

  Department Of Materials Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-asrc Aist

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

関連論文

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• Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
• Performance and Degradation in Single Grain-size Pentacene Thin-Film Transistors
• Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
• Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
• Mobility Variations in Mono- and Multi-Layer Graphene Films
• Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
• A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
• Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
• Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
• Origin of Structural Phase Transformation of SiO_2-doped HfO_2
• Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
• Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
• Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
• Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
• Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
• Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
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• Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
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• Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
• Permittivity Enhancement of Hf_Si_xO_2 Film with High Temperature Annealing
• Long-term Retention of Dye After Indocyanine Green-Assisted Internal Limiting Membrane Peeling
• Thermal Stability of a Thin HfO_2/Ultrathin SiO_2/Si Structure : Interfacial Si Oxidation and Silicidation
• Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
• Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
• A Study of the Effect of Deuterium on Stress-Induced Leakage Current
• Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
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• Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
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• Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
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• Observation of the Creation and Annihilation of Local Current Paths in HfO2 Thin Films on Pt by Ultrahigh-Vacuum Conductive Atomic Force Microscopy: Evidence of Oxygen Spill Over during the Forming Process
• Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing
• Step and Terrace Formation on Ge(111) Surface in H_2 Annealing

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