Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
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概要
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We measured the X-ray photoelectron spectroscopy spectra of the La-incorporated Hf oxide and observed the apparent Hf 4f peak shift toward a lower energy as La concentration increased. To investigate the origin of these peak shifts, we performed first-principles calculations, in which the degree and direction of the obtained peak shifts agreed well with the above-mentioned experimentally observed spectra. Also, we found that the main reason for these peak shifts was the charge-transfer effect. Estimation of the degree of the interface dipole was made possible by a comparison between the experimental values and the theoretical values of the peak shifts.
- 2012-04-25
著者
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Uda Tsuyoshi
Advanced Research Laboratory Hitachi Ltd.
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Ogawa Shingo
Toray Research Center Inc., Otsu 520-8567, Japan
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Yamamoto Takashi
Toray Research Center Inc., Otsu 520-8567, Japan
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Uda Tsuyoshi
AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan
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Tsuji Jun-ichi
Toray Research Center Inc., Otsu 520-8567, Japan
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Tagami Katsunori
AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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