Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
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概要
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Robustness of ultrathin germanium oxynitrides (GeON) formed by plasma nitridation of thermal oxides (GeO2) on Ge(100) substrates [K. Kutsuki et al.: Appl. Phys. Lett. 95 (2009) 022102] was investigated by means of physical and electrical measurements. The decomposition temperature of a 3.7-nm-thick GeON layer was found to increase up to 550 °C by plasma nitridation, which was about 100 °C higher than that of pure GeO2. While the insulating property of GeON dielectrics begins to degrade just below the decomposition temperature, i.e., at around 540 °C, thermal treatment up to 520 °C effectively improves the electrical properties of the ultrathin GeON dielectrics, such as recovery of bulk defects and quite low interface state density ($D_{\text{it}}$) even for the ultrathin gate dielectrics. The advantage of GeON dielectrics in designing a fabrication process for Ge-based devices and the physical origins of the improved properties will be discussed.
- 2011-01-25
著者
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kutsuki Katsuhiro
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hideshima Iori
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Okamoto Gaku
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kutsuki Katsuhiro
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Okamoto Gaku
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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