Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation

スポンサーリンク

概要

• 論文の詳細を見る
• 2007-09-19

著者

• WATANABE Heiji

  Graduate School of Engineering, Osaka University

• Yasutake Kiyoshi

  Graduate School Of Engineering Osaka University

• SHIMURA Takayoshi

  Department of Material and Life Science, Graduate School of Engineering, Osaka University

• Hosoi Takuji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Watanabe Heiji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Watanabe Heiji

  Graduate School Of Engineering Osaka University

• SHIMURA Takayoshi

  Graduate School of Engineering, Osaka University

• Yasutake K

  Graduate School Of Engineering Osaka University

• KUTSUKI Katsuhiro

  Graduate School of Engineering, Osaka University

• OKAMOTO Gaku

  Graduate School of Engineering, Osaka University

• HOSOI Takuji

  Graduate School of Engineering, Osaka University

• Okamoto Gaku

  Graduate School Of Engineering Osaka University

• Kutsuki Katsuhiro

  Graduate School Of Engineering Osaka University

• Shimura Takayoshi

  Graduate School Of Engineering Osaka University

• Shimura Takayoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• YASUTAKE Kiyoshi

  Graduate School of Engineering, Osaka University

関連論文

• Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
• Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
• Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
• Oxygen-Related Donors Generated at 800℃ in CZ-Si
• Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
• High-resolution RBS analysis of Si-dielectrics interfaces
• White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
• Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
• Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
• Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
• Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
• Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
• Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
• Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition (Special issue: Solid state devices and materials)
• Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture
• Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
• Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
• Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode (Special Issue: Solid State Devices & Materials)
• Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition (Special Issue: Solid State Devices & Materials)
• Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption
• High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
• High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
• Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
• Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
• Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
• Fracture of GaAs Wafers : Mechanical and Acoustical Properties
• Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
• Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods
• Fabrication of Silicon Utilizing Mechanochemical Local Oxidation by Diamond Tip Sliding : Surfaces, Interfaces, and Films
• Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range
• Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
• Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process
• Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
• Charge Neutralization Using Focused 500eV Electron Beam in Focused Ion Beam System
• Synchrotron radiation photoemission study of Ge3N4/Ge structures formed by plasma nitridation (Special issue: Dielectric thin films for future electron devices: science and technology)
• Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks
• Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
• Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition
• Charge Neutralization Using Focused 500 eV Electron Beam in Focused Ion Beam System
• Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
• Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
• Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
• White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
• Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Large-Scale Atomistic Modeling of Thermally Grown SiO2 on Si(111) Substrate
• Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
• Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
• Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-$k$ Gate Stacks
• Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2 Films Evaluated by Scanning Capacitance Microscopy
• Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
• La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
• Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
• Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
• Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor
• Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping
• Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
• Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation
• Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
• Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode
• Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H2/He or H2/Ar Mixture
• SiO2 Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power
• Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
• Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth

もっと見る 閉じる

スポンサーリンク