Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range

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概要

• 論文の詳細を見る

• Four point bending tests were performed on heat-treated CZ-Si wafers at various temperatures. The fracture stress at room temperature does not change with heat treatments if the wafer has surface-denuded zones. However, the yield stresses of wafers at 700℃ are remarkebly lowered by such treatments. The heat-treated CZ wafers are deformed plastically at relatively low temperatures and deformation twins appear in such low temperature plastic deformation. Their appearance is closely related to deformation temperature, strain rate and the presence of the thermally induced defects.

• 社団法人応用物理学会の論文
• 1982-05-20

著者

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• YASUTAKE Kiyoshi

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• UMENO Masataka

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• KAWABE Hideaki

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• Kawabe H

  Tatsuta Electric Wire & Cable Co. Ltd. Osaka

• Kawabe Hideaki

  Department Of Applied Physics Faculty Of Engineering Osaka University

• Yasutake K

  Osaka Univ. Osaka

• Yasutake Kiyoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno Masataka

  Department Of Applied Physics Faculty Of Engineering Osaka University

• Kawabe H

  Osaka Polytechnic College

• Yasutake K

  Graduate School Of Engineering Osaka University

• MURAKAMI Junichi

  Department of Electrontcs and Informatics, Faculty of Engineering, Toyama Prefectural University

• Murakami Junichi

  Department Of Electrontcs And Informatics Faculty Of Engineering Toyama Prefectural University

• Murakami Junichi

  Department Of Precision Engineering Faculty Of Engineering Osaka Unviersity

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