Shimura Takayoshi | Department Of Material And Life Science Graduate School Of Engineering Osaka University

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概要

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著作論文

Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
Fabrication of Silicon Utilizing Mechanochemical Local Oxidation by Diamond Tip Sliding : Surfaces, Interfaces, and Films
Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
Large-Scale Atomistic Modeling of Thermally Grown SiO2 on Si(111) Substrate
Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor
Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation
Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth

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