Nishida Yukio | Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan

スポンサーリンク

概要

関連著者

Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
Yugami Jiro
Renesas Technology Corp.
Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
Minami Takashi
Canon Anelva Corporation
Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
KOSUDA Motomu
Canon ANELVA Corporation
Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Horie Shinya
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Kawahara Takaaki
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
Sakashita Shinsuke
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
Nishida Yukio
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
Sakashita Shinsuke
RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Yugami Jiro
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan

もっと見る

著作論文

Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method

スポンサーリンク