KOSUDA Motomu | Canon ANELVA Corporation
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概要
関連著者
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Minami Takashi
Canon Anelva Corporation
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KOSUDA Motomu
Canon ANELVA Corporation
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Yasutake Kiyoshi
Graduate School Of Engineering Osaka University
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Watanabe Heiji
Graduate School Of Engineering Osaka University
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Horie Shinya
Graduate School Of Engineering Osaka University
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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Yugami Jiro
Renesas Technology Corp.
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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HORIE Shinya
Graduate School of Engineering, Osaka University
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KITANO Naomi
Canon ANELVA Corporation
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Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Horie Shinya
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kawahara Takaaki
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Sakashita Shinsuke
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Nishida Yukio
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Sakashita Shinsuke
RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yugami Jiro
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Horie Shinya
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kitano Naomu
Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Minami Takashi
Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Kosuda Motomu
Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
著作論文
- Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks
- Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
- Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-$k$ Gate Stacks