Yugami Jiro | Renesas Technology Corp.
スポンサーリンク
概要
関連著者
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Yugami Jiro
Renesas Technology Corp.
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Umeda Hiroshi
Renesas Technology Corp.
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TSUJIKAWA Shimpei
Renesas Technology Corp.
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SHIGA Katsuya
Renesas Technology Corp.
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Sakashita Shinsuke
RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Minami Takashi
Canon Anelva Corporation
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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KOSUDA Motomu
Canon ANELVA Corporation
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Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Horie Shinya
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kawahara Takaaki
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Sakashita Shinsuke
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Nishida Yukio
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Yamamoto Kazuhiko
Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
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Sato Yoshihiro
Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
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Inoue Masao
RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Anma Masatoshi
RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Oosuka Tsutomu
Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
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Yugami Jiro
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yugami Jiro
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Tsujikawa Shimpei
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
著作論文
- V_/E_-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
- $V_{\text{ox}}/E_{\text{ox}}$-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
- Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
- Phase and Composition Control of Ni Fully Silicided Gates by Nitrogen Ion Implantation and Double Ni Silicidation