Sakashita Shinsuke | RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

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概要

• Sakashita Shinsukeの詳細を見る
• 同名の論文著者
• RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japanの論文著者

関連著者

• Yugami Jiro

  Renesas Technology Corp.

• Sakashita Shinsuke

  RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Hosoi Takuji

  Department Of Electronics And Information Systems Osaka University

• Watanabe Heiji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Minami Takashi

  Canon Anelva Corporation

• Shimura Takayoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• KOSUDA Motomu

  Canon ANELVA Corporation

• Kitano Naomu

  Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Horie Shinya

  Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Arimura Hiroaki

  Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Kawahara Takaaki

  Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan

• Sakashita Shinsuke

  Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan

• Nishida Yukio

  Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan

• Yamamoto Kazuhiko

  Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan

• Sato Yoshihiro

  Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan

• Inoue Masao

  RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Anma Masatoshi

  RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Oosuka Tsutomu

  Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan

• Yugami Jiro

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Yugami Jiro

  Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan

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著作論文

• Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
• Phase and Composition Control of Ni Fully Silicided Gates by Nitrogen Ion Implantation and Double Ni Silicidation

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