Watanabe Heiji | Department Of Material And Life Science Graduate School Of Engineering Osaka University
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概要
- WATANABE Heijiの詳細を見る
- 同名の論文著者
- Department Of Material And Life Science Graduate School Of Engineering Osaka Universityの論文著者
関連著者
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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Kakiuchi Hiroaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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OHMI Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Yasutake K
Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Yasutake Kiyoshi
Graduate School Of Engineering Osaka University
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YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
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Watanabe Heiji
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Kadomura Shingo
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Iwamoto Hayato
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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KAKIUCHI Hiroaki
Department of Precision Science and Technology, Osaka University
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Yasutake K
Osaka Univ. Osaka
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Yoshimoto Chiaki
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Wakamiya Takuya
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Ohmi Hajime
School Of Engineering Nagoya University
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Watanabe Yasumasa
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences The University Of Tokyo
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Hase Takashi
System Devices Research Laboratories Nec Corporation
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Yoshida Shiniti
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Tatsumi Toru
System Devices And Fundamental Research Nec Corporation
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Komoda Hirotaka
Electronic Devices Company Ricoh Co. Ltd.
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Manabe Kenzo
System Devices Research Laboratories Nec Corporation
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Tawara Naotaka
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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YASUTAKE Kiyoshi
Graduate School of Engineering, Osaka University
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MORI Yuzo
Department of Precision Science and Technology, Osaka University
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Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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WATANABE Heiji
Graduate School of Engineering, Osaka University
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YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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IWAMOTO Hayato
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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KADOMURA Shingo
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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YAMADA Keisaku
Waseda Univ.
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Hosoi Takuji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Yamamoto K
Kaneka Corporation
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Mori Yuzo
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Yamamoto Yoh
Engineering Department R&d Department Sii Nano Technology Inc.
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Watanabe Heiji
Graduate School Of Engineering Osaka University
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SHIMURA Takayoshi
Graduate School of Engineering, Osaka University
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Miyanami Yuki
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Terai Yoshikazu
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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YOSHII Kumayasu
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Mori Yuzo
Osaka University Dept. Of Precision Science And Technology Graduate School Of Eng.
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Saeki Masayuki
Department Of Civil Engineering Faculty Of Science And Technology Tokyo University Of Science
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Hirano Tomoyuki
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Tai Kaori
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Ogiwara Shimpei
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Ikuta Tetsuya
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Yamaguchi Shinpei
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Fujita Shigeru
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Iwasaki Kouji
Engineering Department R&d Department Sii Nano Technology Inc.
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Fujiwara Yasufumi
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Ando Takashi
Department Of Applied Biological Chemistry Graduate School Of Agricultural And Life Sciences Univers
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Yoshida Shinichi
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Yoshida Masaaki
Electronic Devices Company Ricoh Co. Ltd.
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc.
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Akasaka Yasushi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Shimura Takayoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Shimura Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hase Takashi
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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ANDO Takashi
Department of Neurosurgery, Asahi University Murakami Memorial Hospital
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KUMIGASHIRA Hiroshi
Department of Physics,Tohoku University
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Teraoka Yuden
Japan Atomic Energy Agency
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YOSHIGOE Akitaka
Japan Atomic Energy Agency
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Shiraishi K
Institute Of Physics University Of Tsukuba
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Zhao Ming
Department of Oral Pathology, Faculty of Dentistry, Hiroshima University
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SUZUKI Motofumi
Department of Global Agricultural Sciences, Graduate School of Agricultural and Life Sciences
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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Kimura Kenji
Department of Engineering Science, Kyoto University
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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OSHIMA Masaharu
Department of Engineering, University of Tokyo
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Kimura Kenji
Dep. Of Micro Engineering Kyoto Univ.
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NAKAJIMA Kaoru
Department of Micro Engineering, Kyoto University
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UEMATSU Masashi
NTT Basic Research Laboratories, NTT Corporation
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KAMIYAMA Satoshi
Semiconductor Leading Edge Technologies, Inc.
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SHIRAISHI Kenji
Institute of Physics, University of Tsukuba
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Yasutake Kiyoshi
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Kumigashira Hiroshi
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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HIRANO Tomoyuki
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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YOSHIDA Shinichi
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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TAI Kaori
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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YAMAGUCHI Shinpei
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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TOYODA Satoshi
Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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YAMABE Kikuo
Univ. of Tsukuba
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SHIRAISHI Kenji
Univ. of Tsukuba
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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HOSOI Takuji
Department of Electronics and Information Systems, Osaka University
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Yamamoto K
Univ. Of Tsukuba
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Ando Takashi
Department Of Internal Medicine And Pathophysiology Nagoya City University Graduate School Of Medica
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YAMABE Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba
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NAKAMURA Kunio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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YOSHIDA Shiniti
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WATANABE Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Kimura Kenji
Department Of Micro Engineering Kyoto University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Hashimoto Tatsuya
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hashimoto Tatsuya
Department Of Gastrointestinal Surgery Faculty Of Medicine Fukuoka University
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Nakamura Kunio
Department Of Micro Engineering Kyoto University
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YAMAMOTO Takashi
Toray Research Center, Inc.
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Yugami Jiro
Renesas Technology Corp.
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Harada Makoto
Department Of Chemistry Tokyo Institute Of Technology
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Toyoda Satoshi
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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IKUTA Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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MIYANAMI Yuki
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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FUJITA Shigeru
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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KUTSUKI Katsuhiro
Graduate School of Engineering, Osaka University
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OKAMOTO Gaku
Graduate School of Engineering, Osaka University
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HOSOI Takuji
Graduate School of Engineering, Osaka University
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TAWARA Naotaka
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WAKAMIYA Takuya
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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FUJIWARA Yasufumi
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
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Zhao Ming
Department Of Micro Engineering Kyoto University
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc. (selete)
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Nakajima Kaoru
Department Of Engineering Physics And Mechanics Kyoto University
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Uematsu Masashi
Ntt Basic Research Laboratories
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Suzuki Motofumi
Department Of Micro Engineering Kyoto University
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Suzuki Motofumi
Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ
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Okamoto Gaku
Graduate School Of Engineering Osaka University
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Minami Takashi
Canon Anelva Corporation
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Zhao Ming
Department Of Dermatology Epigenetic Research Center Second Xiangya Hospital Central South Universit
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Oshida Makiko
System Devices Research Laboratories Nec Corporation
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Kutsuki Katsuhiro
Graduate School Of Engineering Osaka University
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KOMODA Hirotaka
Electronic Devices Company, Ricoh Co., Ltd.
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YOSHIDA Masaaki
Electronic Devices Company, Ricoh Co., Ltd.
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IWASAKI Kouji
Engineering Department R&D Department, SII Nano Technology Inc.
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Takahashi Kensuke
System Devices Research Laboratories Nec Corporation
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Ando Takashi
Department Of Immunology Faculty Of Medicine University Of Yamanashi
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Uematsu Masashi
Ntt Basic Research Laboratories Ntt Corporation
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KOSUDA Motomu
Canon ANELVA Corporation
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Ikarashi Nobuyuki
System Devices Research Laboratories Nec Corporation
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Watanabe Yasumasa
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Ando Takashi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Ito Kenichi
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Uda Tsuyoshi
Advanced Research Laboratory Hitachi Ltd.
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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Watanabe Hirohito
System Devices Research Laboratories Nec Corp.
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Hashimoto Tatsuya
Department Of Gastroenterological Surgery Faculty Of Medicine Fukuoka University
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Uedono Akira
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamada Keisaku
Nano Technology Research Laboratory, Waseda University, Shinjuku, Tokyo 16-0041, Japan
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Naito Tatsuya
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Otsuka Takashi
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 120-5-308 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041, Japan
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Teraoka Yuden
Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan
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Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Horie Shinya
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kawahara Takaaki
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Sakashita Shinsuke
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Nishida Yukio
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Sakashita Shinsuke
RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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KUMIGASHIRA Hiroshi
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Chikyow Toyohiro
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Ohmi Hiromasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies, Inc.
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Yugami Jiro
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Terai Yoshikazu
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Nakatani Ikuko
Application Engineering Department, SII NanoTechnology Inc., 36-1 Takenoshita, Oyama-cho, Sunto-gun, Shizuoka 410-1393, Japan
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Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Ogawa Shingo
Toray Research Center, Inc., Otsu 520-8567, Japan
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Kadomura Shingo
Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Kadomura Shingo
Semiconductor Technology Development Division, Consumer Products and Device Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Miyanami Yuki
Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Umezawa Naoto
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Ando Takashi
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yoshigoe Akitaka
Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan
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Hirano Tomoyuki
Semiconductor Technology Development Division, Consumer Products and Device Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Kakiuchi Hiroaki
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kakiuchi Hiroaki
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Watanabe Heiji
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Watanabe Heiji
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yasutake Kiyoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yasutake Kiyoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Yamaguchi Shinpei
Semiconductor Technology Development Division, Consumer Products and Device Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Iwamoto Hayato
Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Iwamoto Hayato
Semiconductor Technology Development Division, Consumer Products and Device Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Wakamiya Takuya
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
著作論文
- Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
- High-resolution RBS analysis of Si-dielectrics interfaces
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
- Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
- Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
- High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
- Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
- Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
- Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
- Charge Neutralization Using Focused 500eV Electron Beam in Focused Ion Beam System
- Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
- Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition
- Charge Neutralization Using Focused 500 eV Electron Beam in Focused Ion Beam System
- Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
- Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
- Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
- La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
- Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
- Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor
- Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
- Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
- Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode
- Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H2/He or H2/Ar Mixture
- SiO2 Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power
- Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth